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GaN has a superior material characteristic. The key is how we can make high-quality and large area with low cost. The remote epitaxy and 2DLT process which is developed in MIT is a solution for providing GaN substrate. This new technology will dramatically decrease the cost and increase the substrate quality. The substrate quality is important for III-V material based devices because of the lattice matching. Our graphene assisted process allows remote epitaxy without degradation of the substrate and reusing it multiple times.